absolute maximum ratings parameter max. units i d @t c =2 5 c continuous drain current,v gs @10v 15 a i d @t c =100c continuous drain current,v gs @10v 10 i dm pulsed drain current 60 p d @t c =25c power dissipation 4 2 w linear derating factor 0. 4 w/c v gs gate-t o-source voltage 20 v e as single pulse avalanche energy 240 mj e ar repetitive avalanche energy tbd mj dv/dt peak diode recovery voltage 28 v/ns t j t stg operating junction and storage temperatur e range C 5 5 to +1 75 c thermal resistance parameter min. typ. max. units r jc junction-t o-case 3.6 c /w r ja junction-t o-ambient 69 * when mounted on the minimum pad size recommendedpcb mount electrical characteristics @t j =25 c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 10 0 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 0.06 0.09 v gs =10v,i d = 2 a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250a i dss drain-to-source leakage current 1 a v ds = 3 0 v ,v gs =0v 1 0 v ds =1 0 0v, v gs =0v,t j =150c i gss gate-t o-source forward leakage 100 na v gs =20v to-22 0 i d =1 5a bv=1 00v r dson =0.0 6 (typ.) features ? advanced trench process technology ? ideal for convertors and power controls ? high density cell des ign for ultra low rdson ? fully characterized avalanche voltage and current ? avalanche energy 100% tested description application n power switching application symbol symbol sym. ss f1090 100v n-channel mosfet the SSF1090 utilizes the latest processing techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. these features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications. 1/5
gate-t o-source reverse leakage - 100 v gs =-20v q g total gate charge 21.18 nc i d =9.2a,v gs =10v v dd =8 0v,r l =8 .6 q gs gate-t o-source charge 4 .7 q gd gate-t o-drain("miller") charge 8.5 t d(on) turn-o n delay time 10 ns v dd =50v i d =9.2 a ,r l =5.4 r g = 18 v gs =10v t r rise time 9.5 t d(off) turn-off delay time 18.3 t f fall time 4.2 c iss input capacitance 697 75 0 pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance 59 110 c rss reverse transfer capacitance 43 45 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 3 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) 18 v sd diode forward voltage 1. 3 v t j =25c ,i s =3a,v gs =0v t rr reverse recovery time 35 ns t j =25c,i f =9 .2a di/dt=100a/s q rr reverse recovery charge 67 .2 c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s + l d ) e as test circuit gate charge test ci rcuit notes: repe titive rating; pu lse width limited by m ax junction temperature test condition: l =30m h, v dd = 50 v, i d =4a pulse width300s, duty cycle1.5% ; r g = 25 starting t j = 25c sym. ss f1090 100v n-channel mosfet v dd bv dss l r g v dd r l r g 1ma v gs 2/5
switch time test circuit switch waveform on resistance vs. junction temperature breakdown voltage vs. junction temperature gate charge source - drain diode forward voltage ss f1090 100v n-channel mosfet 3/5
safe operation area max drain current vs. junction temperature transient thermal impedance curve ss f1090 100v n-channel mosfet 4/5
to-220 mechanical data ss f1090 100v n-channel mosfet doc.usSSF1090x 2.1 www.goodarksemi.com symbol dimensions in mm 5/5
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